一、 题 目：Electron Transport Phenomena in Semiconductor and Topological Insulator Nanowires
二、 报告人：Prof. Xuan Gao（Case Western Reserve University, Department of Physics）
四、 时 间：６月２２日（周二），上午１０：００
五、 地 点：物理馆５１２学术会议室
Semiconductor nanowires are believed to be promising materials for novel nanoelectronic, optoelectronic and biosensor applications. With the small length scale and a variety of material choices, nanowires are also a versatile platform to explore rich mesoscopic physics. I will discuss our recent magneto-transport studies of InAs and Bi2Se3 nanowires. In InAs nanowires with small diameters, we found that quantum interference leads to one-dimensional localization of electrons. For nanowires/ribbons of Bi2Se3, a topological insulator, our magneto-transport experiments revealed a linear quantum magneto-resistance that is consistent with the existence of Dirac electrons on sample surface.
 D. Liang, M.R. Sakr and X.P.A. Gao, Nano Lett. 9, 1709 (2009).
 J. Du, D. Liang, H. Tang and X.P.A. Gao, Nano Lett. 9, 4348 (2009).
 D. Liang, J. Du and X.P.A. Gao, Phys. Rev. B, 81, 153304 (2010).
 H. Tang, D. Liang, R. L.J. Qiu and X.P.A. Gao, arXiv: 1003.6099.